SSM4435M Datasheet, PDF (4/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4435M
10
8
6
4
2
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 6. Typical Power Dissipation
100.00
10.00
1.00
T _c =25 ^o C
Single Pulse
0.10
0.1
1
10
-V _DS (V)
100us
1ms
10ms
100ms
1s
100
Fig 7. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10
100
1000
Fig 8. Effective Transient Thermal Impedance
Rev.2.02 4/18/2004
www.SiliconStandard.com
4 of 6