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| SSM4435M Datasheet, PDF (2/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |||
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SSM4435M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
â BV DSS/â Tj
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
-30 -
-V
- -0.037 - V/°C
RDS(ON)
Static Drain-Source On-Resistance VGS=-10V, ID=-8A
-
- 20 mâ¦
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-15V, ID=-8A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 20V
ID=-4.6A
VDS=-15V
VGS=-10V
VDS=-15V
ID=-1A
RG=6⦠, VGS=-10V
RD=15â¦
VGS=0V
VDS=-15V
f=1.0MHz
-
- 35 mâ¦
-1 - -3 V
- 20 - S
-
- -1 uA
- - -25 uA
-
- ±100 nA
- 36 - nC
- 5.5 - nC
- 3.5 - nC
- 12 - ns
- 8 - ns
- 75 - ns
- 40 - ns
- 1530 - pF
- 900 - pF
- 280 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25°C, IS=-2.1A, VGS=0V
Min. Typ. Max. Units
- - -2.1 A
- - -50 A
- -0.75 -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Rev.2.02 4/18/2004
www.SiliconStandard.com
2 of 6
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