SSM4435M Datasheet, PDF (3/6 Pages) Silicon Standard Corp. – P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4435M
50
T _C =25 ^o C
40
30
20
V _G =-10V
V _G =-8.0V
V _G =-6.0V
V _G =-4.0V
10
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
T _C =150 ^o C
40
30
20
V _G =-10V
V _G =-8.0V
V _G =-6.0V
V _G =-4.0V
10
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
40
Id=-8A
35
T _c =25 ℃
30
25
20
15
3
4
5
6
7
8
9
10
11
-V _GS (V)
Fig 3. On-Resistance vs. Gate Voltage
1.6
I _D =-8A
1.4
V _G =-10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Rev.2.02 4/18/2004
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