SSM2314GN Datasheet, PDF (4/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

12
I _D =3A
10
8
V _DS =10V
V _DS =12V
6
V _DS =16V
4
2
0
0
2
4
6
8
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1
10ms
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
15
V _DS =5V
10
T _j =25 ^o C
T _j =150 ^o C
5
SSM2314GN
f=1.0MHz
1000
C _iss
100
C _oss
C _rss
10
1
5
9
13
17
21
25
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270°C/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
0
0
2
4
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Charge
Q
Fig 12. Gate Charge Circuit
4/16/2005 Rev.2.1
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