English
Language : 

SSM2314GN Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET
◁
SSM2314GN
ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=5V, ID=3A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±12V
ID=3A
VDS=16V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω , VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
20 -
-
V
- 0.02 - V/°C
-
- 75 mΩ
-
- 125 mΩ
0.5 - 1.2 V
-
7
-
S
-
-
1 uA
-
- 10 uA
-
- ±100 nA
-
4
7 nC
- 0.7 - nC
-
2
- nC
-
6
- ns
-
8
- ns
- 10 - ns
-
3
- ns
- 230 370 pF
- 55 - pF
- 40 - pF
- 1.1 1.7 Ω
Min. Typ. Max. Units
-
- 1.2 V
- 16 - ns
-
8
- nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle <2%.
3.Surface-mounted on 1 in2 copper pad on FR4 board , t < 10sec ; 270°C/W when mounted on minimum copper pad.
4/16/2005 Rev.2.1
www.SiliconStandard.com
2 of 5
 ▷