SSM2314GN Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

15
T _A =25 ^o C
10
5.0V
4.5V
3.0V
2.5V
5
V _G = 1. 5V
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D =1.2A
T _A =25 ^o C
80
60
40
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
3
15
T _A = 150 ^o C
10
SSM2314GN
5.0V
4.5V
3.0 V
2.5V
5
V _G = 1 .5V
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = 3.5 A
1.4
V _G =4.5V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
0.8
2
0.7
T _j =150 ^o C
T _j =25 ^o C
1
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
4/16/2005 Rev.2.1
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