SSM2306N Datasheet, PDF (4/4 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

14
12 ^{I D =5.3A}
V _DS =16V
10
8
6
4
2
0
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
SSM2306N
1000
f=1.0MHz
Ciss
100
Coss
Crss
10
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
1ms
1
10ms
0.1
T _A =25 ^o C
Single Pulse
0.01
0.1
1
100ms
1s
DC
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak T_j = P_DM x R_thja + T_a
Rthja = 270℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
R_D
D
V_DS
TO THE
OSCILLOSCOPE
R_G
G
0.75x RATED
V
+
10 V
-
S
V_GS
V_DS
D
G
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
S
V_GS
+
1~ 3 mA
-
I
I
G
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
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Rev.2.02 3/16/2004
www.SiliconStandard.com
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