SSM2306N Datasheet, PDF (3/4 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

80
T _A =25 ^o C
60
40
5.0V
4.5V
4.0V
V _G =2.5V
20
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
T _A =150 ^o C
40
30
20
10
SSM2306N
5.0V
4.5V
4.0V
V _G =2.5V
0
0
1
2
3
4
5
6
7
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
I _D =5.3A
T _A =25 ^o C
80
60
40
20
1
3
5
7
9
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
10
T _j =150 ^o C
1
T _j =25 ^o C
0.1
0.01
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.8
I _D =5.3A
1.6
V _G =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 3/16/2004
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