 English |
|
|
|
|
|
|
|
| SSM2306N Datasheet, PDF (2/4 Pages) Silicon Standard Corp. – N-CHANNEL ENHANCEMENT-MODE POWER MOSFET | |||
| |||
| ◁ |
SSM2306N
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
âBV DSS/â Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=10V, ID=5.5A
VGS=4.5V, ID=5.3A
VGS=2.5V, ID=2.6A
VDS=VGS, ID=250uA
VDS=5V, ID=5.3A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS= ± 12V
ID=5.3A
VDS=10V
VGS=4.5V
VDS=15V
ID=1A
RG=2⦠,VGS=10V
RD=15â¦
VGS=0V
VDS=10V
f=1.0MHz
20 -
-
V
-
0.1 - V/°C
-
- 27 mâ¦
-
- 32 mâ¦
-
- 50 mâ¦
0.5 -
-
V
- 13 -
S
-
-
1 uA
-
- 10 uA
-
- ±100 nA
- 8.7 - nC
- 1.5 - nC
- 3.6 - nC
-
6
- ns
- 14 - ns
- 18.4 - ns
- 2.8 - ns
- 575 - pF
- 120 - pF
- 92.3 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 16.8 - ns
- 11 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270°C/W when mounted on min. copper pad.
Rev.2.02 3/16/2004
www.SiliconStandard.com
2 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese