SSM2305AGN Datasheet, PDF (4/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

12
I _D = -3.2A
10
V _DS = -24V
8
6
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1
10ms
0.1
100ms
T _A =25 ^o C
1s
Single Pulse
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SSM2305AGN
f=1.0MHz
10000
1000
Ciss
100
Coss
Crss
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
Single pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
RΘja = 270°C/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
2/16/2005 Rev.2.1
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