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| SSM2305AGN Datasheet, PDF (2/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET | |||
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SSM2305AGN
ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise specified)
Symbol
BVDSS
â BV DSS/ âTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance VGS=-10V, ID=-3.2A
VGS=-4.5V, ID=-3.0A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=VGS, ID=-250uA
VDS=-5V, ID=-3.0A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 12V
ID=-3.2A
VDS=-24V
VGS=-4.5V
VDS=-15V
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID=-3.2A
RG=3.3⦠, VGS=-10V
RD=4.6â¦
VGS=0V
VDS=-25V
f=1.0MHz
Min. Typ. Max. Units
-30 -
-
V
- -0.1 - V/°C
-
- 60 mâ¦
-
- 80 mâ¦
-
- 150 mâ¦
-
- 250 mâ¦
-0.5 - -1.2 V
-
9
-
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 10 18 nC
- 1.8 - nC
- 3.6 - nC
-
7
- ns
- 15 - ns
- 21 - ns
- 15 - ns
- 735 1325 pF
- 100 - pF
- 80 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-3.2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 24 - ns
- 19 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle <2%.
3.Surface-mounted on 1 in2 copper pad on FR4 board ; 270°C/W when mounted on minimum copper pad.
2/16/2005 Rev.2.1
www.SiliconStandard.com
2 of 5
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