SSM2305AGN Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – P-channel Enhancement-mode Power MOSFET

40
T _A =25 ^o C
30
20
-5.0V
-4.0V
-3.0V
10
V _G = -2.0V
0
0
1
2
3
4
5
6
7
8
9
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
300
I _D = -1.0A
T _A =25 ^o C
200
100
0
0
2
4
6
8
10
12
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
100
SSM2305AGN
36
32
T_A=150^oC
28
-5.0V
-4.0V
24
20
-3.0V
16
12
8
V _G = -2.0V
4
0
0
1
2
3
4
5
6
7
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I _D = -3.0A
V _GS = -4.5V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.5
10
1
T _j =150 ^o C
T _j =25 ^o C
1
0.5
0.1
0.01
0
0.4
0.8
1.2
1.6
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/16/2005 Rev.2.1
www.SiliconStandard.com
3 of 5