SSM04N70BGF-A Datasheet, PDF (4/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

16
I _D =4A
12
V _DS =320V
V _DS =400V
V _DS =480V
8
4
0
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
0.1
T _c =25 ^o C
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
1
10
100
1000
V _DS (V)
10000
Fig 9. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
SSM04N70BGF-A
f=1.0MHz
10000
C _iss
100
C _oss
C _rss
1
1
6
11
16
21
26
31
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedanc
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
9/12/2006 Rev.3.1
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