SSM04N70BGF-A Datasheet, PDF (3/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

2.5
T _C =25 ^o C
2
10V
6.0V
5.0V
1.5
4.5V
1
0.5
V _G =4.0V
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
1.8
T _C =150 ^o C
1.2
SSM04N70BGF-A
10V
6.0V
5.0V
4.5V
0.6
4.0V
V _G =3.5V
0
0
3
6
9
12
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I _D =2A
V _G =10V
2
1
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV _DSS vs. Junction
Temperature
100
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
5
4
10
T _j =150 ^o C
T _j = 25 ^o C
3
1
2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V _SD (V)
1
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
9/12/2006 Rev.3.1
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