SSM04N70BGF-A Datasheet, PDF (1/5 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM04N70BGF-A
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
650V
R _DS(ON)
2.4Ω
I_D
4A
Pb-free; RoHS-compliant TO-220FM
G
D
S
TO-220FM (suffix I)
DESCRIPTION
The SSM04N70BGF-A achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
The SSM04N70BGF-A is in TO-220FM for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_GS
I_D
I_DM
P_D
E_AS
IAR
EAR
T_STG
T_J
Drain-source voltage
Gate-source voltage
Continuous drain current, T_C = 25°C
Pulsed drain current¹
T_C = 100°C
Total power dissipation, T_C = 25°C
Linear derating factor
Single pulse avalanche energy³
Avalanche current
Repetitive avalanche energy
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
R_ΘJC
R_ΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, V_DD=50V , L=25mH , R_G=25Ω , I_AS= 4A.
9/12/2006 Rev.3.1
www.SiliconStandard.com
Value
650
±30
4
2.5
15
33
0.26
100
4
4
-55 to 150
-55 to 150
Value
3.8
65
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Units
°C/W
°C/W
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