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S29GL-M Datasheet, PDF (89/116 Pages) SPANSION – 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology
Data Sheet
AC Characteristics
Erase and Program Operations—S29GL064M Only
Parameter
JEDEC Std.
Description
Speed Options
90 10 11
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tGHWL
tELWL
tWHEH
tWLWH
tWHDL
tWC
tAS
tASO
tAH
tAHT
tDS
tDH
tCEPH
tOEPH
tGHWL
tCS
tCH
tWP
tWPH
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Min 90
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
100 110
0
15
45
0
35
0
20
20
0
0
0
35
30
240
tWHWH1 tWHWH1 Single Word Program Operation (Note 2)
Accelerated Single Word Program Operation (Note 2)
Typ
60
Typ
54
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
tVHH VHH Rise and Fall Time (Note 1)
tVCS VCC Setup Time (Note 1)
tBUSY WE# High to RY/BY# Low
tPOLL Program Valid before Status Polling
Typ
Min
Min
Min 90
Max
0.5
250
50
100 110
4
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance for more information
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading
status data, once programming resumes (that is, the program resume command has been
written). If the suspend command was issued after tPOLL, status data is available immediately
after programming resumes. See Figure 16.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
µs
ns
µs
October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBitTM Flash Family
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