S29CD-J Datasheet, PDF (68/76 Pages) SPANSION – 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O

Data Sheet (Preliminary)
19. Appendix 1
19.1
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system
can read CFI information at the addresses given in Table 19.1-Table 19.3. In order to terminate reading CFI
data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Table 19.1-Table
19.3. The system must write the reset command to return the device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact a Spansion
representative for copies of these documents.
Table 19.1 CFI Query Identification String
Addresses
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query Unique ASCII string QRY
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Table 19.2 CFI System Interface String
Data
Description
(see description)
V_CC Min. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0023h = S29CD-J devices
0030h = S29CL-J devices
(see description)
V_CC Max. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0027h = S29CD-J devices
0036h = S29CL-J devices
0000h
0000h
0004h
V_PP Min. voltage (00h = no V_PP pin present)
V_PP Max. voltage (00h = no V_PP pin present)
Typical timeout per single word/doubleword program 2^N µs
0000h
Typical timeout for Min. size buffer program 2^N µs (00h = not supported)
0009h
Typical timeout per individual block erase 2^N ms
0000h
Typical timeout for full chip erase 2^N ms (00h = not supported)
0005h
Max. timeout for word/doubleword program 2^N times typical
0000h
Max. timeout for buffer write 2^N times typical
0007h
Max. timeout per individual block erase 2^N times typical
0000h
Max. timeout for full chip erase 2^N times typical (00h = not supported)
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S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September 27, 2006