S29AL016J70BFI020 Datasheet, PDF (52/58 Pages) SPANSION – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Data Sheet
18. Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
Chip Erase Time
0.5
10
s
Excludes 00h programming
16
s
prior to erasure (Note 4)
Byte Programming Time
6
150
µs
Word Programming Time
6
Chip Programming Time ^{Byte Mode}
21.6
(Note 3)
Word Mode
6.3
150
µs
Excludes system level
160
s
overhead (Note 5)
120
s
Notes
1. Typical program and erase times assume the following conditions: 25° C, V_CC = 3.0 V, 100,000 cycles, checkerboard data pattern.
2. Under worst case conditions of 90°C, V_CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10.1
on page 34 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
19. TSOP and BGA Pin Capacitance
Parameter Symbol
C_IN
Parameter Description
Input Capacitance
C_OUT
Output Capacitance
C_IN2
Control Pin Capacitance
C_IN3
WP# Pin Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions T_A = 25°C, f = 1.0 MHz.
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
V_IN = 0
Package
TSOP
BGA
TSOP
BGA
TSOP
BGA
TSOP
BGA
Typ Max Unit
4
6
4
6
4.5
5.5
4.5
5.5
pF
5
6.5
5
6.5
8.5
10
8.5
10
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S29AL016J
S29AL016J_00_12 April 12, 2012