S29AL016J70BFI020 Datasheet, PDF (26/58 Pages) SPANSION – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Data Sheet
9. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system
can read CFI information at the addresses given in Table 9.1 to Table 9.4 on page 27. In word mode, the
upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Table 9.1 to
Table 9.4 on page 27. The system must write the reset command to return the device to the autoselect mode.
Table 9.1 CFI Query Identification String
Addresses
(Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Addresses
(Byte Mode)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
(Word Mode)
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Addresses
(Byte Mode)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
Table 9.2 System Interface String
Data
0027h
0036h
0000h
0000h
0003h
0000h
0009h
0000h
0005h
0000h
0004h
0000h
Description
V_CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
V_CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
V_PP Min. voltage (00h = no V_PP pin present)
V_PP Max. voltage (00h = no V_PP pin present)
Typical timeout per single byte/word write 2^N µs
Typical timeout for Min. size buffer write 2^N µs (00h = not supported)
Typical timeout per individual block erase 2^N ms
Typical timeout for full chip erase 2^N ms (00h = not supported)
Max. timeout for byte/word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual block erase 2^N times typical
Max. timeout for full chip erase 2^N times typical (00h = not supported)
26
S29AL016J
S29AL016J_00_12 April 12, 2012