MBM29DS163TE10 Datasheet, PDF (41/67 Pages) SPANSION – FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT Dual Operation

MBM29DS163TE/BE10
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Limit
Min
Typ
Max
Sector Erase Time

1
10
Word Programming Time
Byte Programming Time

16
360

8
300
Chip Programming Time


50
Program/Erase Cycle
100,000


Unit
Comments
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead

s TSOP (1) PIN CAPACITANCE
Parameter
Symbol
Test Setup
Input Capacitance
CIN
VIN = 0
Output Capacitance
COUT
VOUT = 0
Control Pin Capacitance
CIN2
VIN = 0
WP/ACC Pin Capacitance
CIN3
VIN = 0
Notes : • Test conditions TA = + 25 °C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
s FBGA PIN CAPACITANCE
Parameter
Symbol
Test Setup
Input Capacitance
CIN
VIN = 0
Output Capacitance
COUT
VOUT = 0
Control Pin Capacitance
CIN2
VIN = 0
WP/ACC Pin Capacitance
CIN3
VIN = 0
Notes : • Test conditions TA = + 25 °C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
Typ
Max
Unit
6.0
7.5
pF
8.5
12.0
pF
8.0
11.0
pF
21.5
22.5
pF
Typ
Max
Unit
6.0
7.5
pF
8.5
12.0
pF
8.0
10.0
pF
17.0
18.0
pF
41