MBM29DS163TE10 Datasheet, PDF (37/67 Pages) SPANSION – FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT Dual Operation

MBM29DS163TE/BE10
s DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
ILI
VIN = VSS to VCC, VCC = VCC Max
−1.0
+1.0
Output Leakage Current
ILO
VOUT = VSS to VCC, VCC = VCC Max
−1.0
+1.0
A9, OE, RESET Inputs Leakage
Current
ILIT
VCC = VCC Max
A9, OE, RESET = 11.0 V

35
VCC Active Current *¹
CE = VIL, OE = VIH,
f = 5 MHz
Byte

Word
16
16
ICC1
CE = VIL, OE = VIH,
f = 1 MHz
Byte

Word
4
4
VCC Active Current *²
ICC2
CE = VIL, OE = VIH

25
VCC Current (Standby)
ICC3
VCC = VCC Max, CE = VCC ± 0.3 V,
RESET = VCC ± 0.3 V

5
VCC Current (Standby, Reset)
ICC4
VCC = VCC Max, WE/ACC = VCC ±
0.3 V, RESET = VSS ± 0.3 V

5
VCC Current
(Automatic Sleep Mode) *³
VCC = VCC Max, CE = VSS ± 0.3 V,
ICC5
RESET = VCC ± 0.3 V

5
VIN = VCC ± 0.3 V or VSS ± 0.3 V
VCC Active Current *⁵
(Read-While-Program)
Byte

25
ICC6
CE = VIL, OE = VIH
Word 
25
VCC Active Current *⁵
(Read-While-Erase)
Byte

25
ICC7
CE = VIL, OE = VIH
Word 
25
VCC Active Current
(Erase-Suspend-Program)
ICC8
CE = VIL, OE = VIH

15
WP/ACC Accelerated Program
Current
IACC
VCC = VCC Max
WP/ACC = VACC Max

10
Input Low Level
VIL

−0.5 0.2 × VCC
Input High Level
VIH

0.8 × VCC VCC + 0.3
Voltage for WP/ACC Sector
Protection/Unprotection and
VACC

8.5
9.5
Program Acceleration *⁴
Voltage for Autoselect and Sector
Protection (A9, OE, RESET) *⁴
VID

10.0
11.0
Output Low Voltage Level
VOL
IOL = 100 µA, VCC = VCC Min

0.1
Output High Voltage Level
VOH
IOH = −100 µA
VCC − 0.1

*1 : ICC current listed includes both the DC operating current and the frequency dependent component.
*2 : IICC active while Embedded Algorithm (program or erase) is in progress.
*3 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*4 : Applicable for only VCC applying.
*5 : Embedded Algorithm (program or erase) is in progress. (@5 MHz)
Unit
µA
µA
µA
mA
mA
mA
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
37