MBM29DS163TE10 Datasheet, PDF (1/67 Pages) SPANSION – FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT Dual Operation

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20891-4E
FLASH MEMORY
CMOS
16 M (2 M × 8/1 M × 16) BIT Dual Operation
MBM29DS163TE/BE10
s DESCRIPTION
The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M
words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is
designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not
required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
(Continued)
s PRODUCT LINE UP
Part No.
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29DS163TE/BE10
VCC
=
2.0
V +0.2
−0.2
V
V
100
100
35
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-48P-M11)