CGA-3318 Datasheet, PDF (6/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 Dual SiGe HBT Amplifier
Pin # Function
Description
1
RF IN RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the
Device 1 schematic.
2,3
Ground
Connection to ground. Use via holes for best performance to reduce lead inductance as close
to ground leads as possible.
4
RF IN
Device 2
Same as pin 1
RF output and bias pin. Bias should be supplied to this pin through an external series resistor
5
RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor
Device 2 should be used in most applications (see application schematic). The supply side of the bias
network should be well bypassed.
6,7
Ground Same as pins 2 and 3
8
EPAD
RF OUT / Vcc
Device 1
Same as pin 5
Ground
Exposed area on the bottom side of the package must be soldered to the ground plane of the
board for optimum thermal and RF performance. Several vias should be located under the
EPAD as shown in the recommended land pattern on page 5.
Device Pin Out
1
8
2
7
3
6
4
5
50-870 MHz Application Schematic
Vs
1µF Tant. 0.01µF 1000pF 68pF
RBIAS
Macom
ETC1-1-13
1
1000 pF
2,3
Amp 1
220 nH
8
1000 pF
6,7
1000 pF
4
Amp 2
Macom
1000 pF _ETC1-1-13
5
CGA-3318
SOIC-08
220 nH
1µF Tant. 0.01µF 1000pF 68pF
50-870 MHz Evaluation Board Layout
RF INPUT
Balun ETC1-1-13
1000pF
Rbias
1uF Tant.
RF OUTPUT
.01uF
1000pF
68pF
220nH
1000pF
Balun ETC1-1-13
1000pF
1000pF
220nH
68pF
1000pF
.01uF
ECB-101611 Rev A
1uF Tant.
ESOP-8
Push-Pull
Rbias
Eval Board
RBIAS
Vs
Recommended Bias Resistor Values for ID= 150mA
Supply Voltage (V_S)
R_BIAS
R_BIAS Power Rating
8V
51Ω
1/2W
9V
62Ω
1/2W
12V
100Ω
1W
15V
150Ω
1W
2(V_S-V_D)
R_BIAS=
I_D
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
6
Part Number Ordering Information
Part Number Reel Size Devices / Reel
CGA-3318
7"
500
CGA-3318Z
7"
500
http://www.sirenza.com
EDS-101993 Rev H