CGA-3318 Datasheet, PDF (2/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 Dual SiGe HBT Amplifier
Absolute Maximum Ratings
Parameter
Max Device Current (I_D)
Max Device Voltage (V_D)
Max. RF Input Power
Max. Junction Temp. (T_J)
Operating Temp. Range (T_L)
Max. Storage Temp.
Absolute Limit
225 mA
6V
+18 dBm
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D < (T_J - T_L) / R_TH, j-l T_L=T_LEAD
Reliability & Qualification Information
Parameter
Rating
ESD Rating - Human Body Model (HBM)
Class 1B
Moisture Sensitivity Level
MSL 1
This product qualification report can be downloaded at
www.sirenza.com
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Typical RF Performance: V_S=8V, I_D=150mA @ T_L=+25°C, R_BIAS=51 Ohms, Push-Pull Configuration
Gain vs. Frequency
16
14
12
10
8
6
0
+25°C
-40°C
+85°C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
Input Return Loss vs. Frequency
0
-5
-10
-15
-20
+25°C
-40°C
-25
+85°C
-30
0
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
Output Return Loss vs. Frequency
+25°C
-40°C
+85°C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
75 Ohm Push Pull S-parameters are available for download at www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101993 Rev H