CGA-3318 Datasheet, PDF (5/8 Pages) Stanford Microdevices – Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 Dual SiGe HBT Amplifier
Typical RF Performance - Single Ended - 50 Ohm System
V_S=8V, I_D=75mA (one amp biased), T_L=+25°C, R_BIAS=51 Ohms
16
14
12
10
8
6
4
2
0
0.0
Gain & Isolation vs. Frequency
Gain
Isolation
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
0
-4
-8
-12
-16
-20
-24
-28
-32
4.0
|S11| & |S22| vs. Frequency
0
-5
-10
-15
|S11|
-20
-25
-30
|S22|
-35
-40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Typical RF Performance - Single Ended - 37.5 Ohm System
V_S=8V, I_D=75mA (one amp biased), T_L=+25°C, R_BIAS=51 Ohms
Gain & Isolation vs. Frequency
16
0
0
14
Gain
-4
-5
12
-8
-10
|S11| & |S22| vs. Frequency
|S22|
10
-12
-15
8
-16
6
Isolation
-20
4
-24
2
-28
0
-32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
-20
|S11|
-25
-30
-35
-40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at
www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101993 Rev H