SUR15040SR Datasheet, PDF (4/4 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR15040SR
Ultra Fast Recovery Epitaxial Diodes
180
160
140
DC
120
100
Square wave (D = 0.50)
80 ^{Rated Vr applied}
60
see note (1)
40
0 50 100 150 200 250
Average Forward Current - IF_(AV)(A)
Fi g. 5 - Maxi mum Allowable Case Temperature vs.
AverageForward Curren t
300
250
RMS Limit
200
150
100
50
0
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
DD=C0.20
D = 0.50
DC
50 100 150 200 250
Average Forward Current - IF_(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
200
IF = 150A
IF = 75A
150
100
50
100
di _F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery Time vs. dI _F / dt
5000
4500
4000
Vr = 200V
Tj = 125˚C
Tj = 25˚C
3500
3000
IF = 150A
IF = 75A
2500
2000
1500
1000
500
0
100
Fig. 8 -
di _F/dt (A/µs )
1000
Typical Stored Charge vs. di _F/dt
P4
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