SUR15040SR Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR15040SR
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
RthJA
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=25^oC; VR=0.8^.VRRM
TVJ=150^oC; VR=VRRM
IF=150A; TVJ=175^oC
TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25^oC
VR=350V; IF=30A; -diF/dt=240A/us; L_<0.05uH; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
50
uA
30
uA
4
mA
1.1
1.3
V
1.01
V
7.1
m
0.2
0.35
K/W
35
60
ns
20
A
FEATURES
* Lead -Free Plating
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Screw Mounting only
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Reduced RFI and EMI
* Higher Frequency Operation
* Reduced Snubbing
* Reduced Parts Count
P2
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