SUR15040SR Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR15040SR
Ultra Fast Recovery Epitaxial Diodes
1000
100
T_J = 175˚C
T_J = 125˚C
T_J = 25˚C
10
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V_FM (V)
Fig. 1 - MaximumForward
VoltageDrop Characteristics
1000
100
10
T _J = 175˚C
125˚C
1
25˚C
0.1
0.01
0.001
0
100 200 300 400
Reverse Voltage - V_R (V)
Fi g. 2 - Typical Values of Reverse Current vs.
ReverseVoltag e
10000
T _J= 25˚C
1000
100
10
10
100
1000
Reverse Voltage - V_R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
D = 0.20
0.1
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P_DM
t1
t2
1. Duty factor D = t1/ t 2
0.01
0.00001
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - MaximumThermal Impedance Z_{t hJC} Characteristic s
P3
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