BAT26-400 Datasheet, PDF (4/4 Pages) Sirectifier Semiconductors – Discrete Triacs

BTA26
Discrete Triacs(Isolated)
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
F ig. 8 : R elative varia tion of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ).
IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ]
2.5
2.0
IG T
1.5
IH & IL
1.0
0.5
Tj(°C )
0.0
-40 -20 0 20 40 60 80 100 120 140
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4 B
B W/C W/T 2535
1.2
1.0
0.8
0.6
(dV /dt)c (V /µs )
0.4
0.1
1.0
10.0
100.0
F ig. 9 : R elative variation of critical rate of
decreas e of main current vers us junction
te mpe ra ture .
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
Tj (°C )
0
0
25
50
75
100
125
P4
©2008 SIRECTIFIER All rights reserved,
Tel: [phone] Fax: [phone] E-mail: [e-mail]
www.sirectifier.com