BAT26-400 Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Discrete Triacs

BTA26
Discrete Triacs(Isolated)
F ig. :1 Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
P (W)
30
25
20
15
10
5
0
0
5
IT(R MS ) (A)
10
15
20
25
F ig. -2: R MS on-s tate current vers us cas e
temperature (full cycle).
IT(R MS ) (A)
30
25
20
15
10
5
0
0
25
B TA26
T c(°C )
50
75
100
125
F ig.3: R ela tive variation of thermal impedance
vers us puls e duration.
K =[Zth/R th]
1E +0
1E -1
Zth(j-c)
Z th( j-a )
B TA/B T B 24/T 25
1E -2
1E -3
1E -3
Z th( j-a )
B TA26
tp (s )
1E -2 1E -1 1E +0
1E +1
1E +2 5E +2
F ig. 4 : O n-s tate characteris tics (ma ximum
values ).
ITM (A)
300
100
T j max
10
T j=25°C
VTM (V)
Tj max.
V to = 0.8V5
R d = 16 Ωm
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
F ig. 5: S urge peak on-s tate current versus
number of cycles.
ITS M (A)
300
250
200
150
100
Non repetitive
T j initial=25°C
R epetitive
T c=75°C
50
Number of yccles
0
1
10
100
t=20ms
One cycle
1000
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
IT S M (A ), I²t (A²s )
3000
1000
dI/dt limitation:
50A /µs
T j initial=25°C
ITS M
100
0.01
I²t
tp (ms )
0.10
1.00
10.00
P3
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