BAT26-400 Datasheet, PDF (1/4 Pages) Sirectifier Semiconductors – Discrete Triacs

BTA26
Discrete Triacs(Isolated)
T2
T1
Type
BTA26-400
BTA26-600
BTA26-800
BTA26-1000
BTA26-1200
G
T2
V RSM
V DSM
V
500
700
900
1100
1300
G
T1
V RRM
V DRM
V
400
600
800
1000
1200
Dimensions TO-218
H
R
ØL
K
FG
A
B
P
C
JJ
D
E
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.4
4.6 0.173
0.181
B 1.45
1.55 0.057
0.061
C 14.35
15.60 0.565
0.614
D 0.5
0.7 0.020
0.028
E 2.7
2.9 0.106
0.114
F 15.8
16.5 0.622
0.650
G 20.4
21.1 0.815
0.831
H 15.1
15.5 0.594
0.610
J 5.4
5.65 0.213
0.222
K 3.4
3.65 0.134
0.144
ØL 4.08
4.17 0.161
0.164
P 1.20
1.40 0.047
0.055
R
4.60
0.181
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I_{T(RMS) RMS on-state current (full sine wave)}
I_TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I^²t
I^²t Value for fusing
dI/dt
Critical rate of rise of on-state current
I_G = 2 x I _GT , tr <_ 100 ns
V_DSM/V _RSM
Non repetitive surge peak off-state
voltage
I_GM
P_G(AV)
T_stg
T_j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
TO-218
F = 60 Hz
F = 50 Hz
Tc = 100°C
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
tp = 20 µs
Tj = 125°C
Tj = 125°C
25
250
260
340
50
V_DRM/V_RRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
A
A^²s
A/µs
V
A
W
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESSand LOGIC LEVEL(3 Quadrants)
Symbol
Test ConGLtions
Quadrant
BTA
I_GT
V_GT
V_GD
I_H
I_L
dV/dt
(dI/dt)c
V_D = 12 V
R_L = 33 Ω
I - II - III
I - II - III
V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C I - II - III
I_T = 500 mA
I_G = 1.2 I_GT
I - III
II
V_D = _{67 %} V_{DRM gate open Tj = 125°C}
Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW
35
1.3
0.2
50
70
80
500
13
BW
50
75
80
100
1000
22
Unit
mA
V
V
mA
mA
V/µs
A/ms
P1
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