BAT10 Datasheet, PDF (4/4 Pages) Sirectifier Semiconductors – Discrete Triacs

BTA10
Discrete Triacs(Isolated)
F ig.7 : R ela tive variation of gate trigger current,
holding current and latching current vers us
junction temperature (typical values).
F ig.8 : R ela tive variation of critica l rate of decreas e
of main current versus (dV /dt)c (typical values).
IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ]
2.5
2.0
IG T
1.5
IH & IL
1.0
0.5
Tj(°C )
0.0
-40 -20 0 20 40 60 80 100 120 140
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
C
1.6
B
1.4
1.2
1.0
0.8
0.6
0.4
0.1
(dV /dt)c (V /µs )
1.0
10.0
B W/C W
100.0
F ig. 9 : R elative varia tion of critical rate of
decreas e of main current vers us junction
te mpe ra ture.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
Tj (°C )
0
0
25
50
75
100
125
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