BAT10 Datasheet, PDF (1/4 Pages) Sirectifier Semiconductors – Discrete Triacs

BTA10
Discrete Triacs(Isolated)
T2
Dimensions TO-220AB
T2
G
G
T2
T1
T1
BTA10-200
BTA10-400
BTA10-600
BTA10-800
BTA10-1000
BTA10-1200
VDRM/RRM VDSM/RSM
V
V
200
300
400
500
600 700
800
900
1000 1100
1200 1300
ABSOLUTE MAXIMUM RATINGS
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Parameter
V
Unit
I_{T(RMS) RMS on-state current (full sine wave)}
TO-220AB
Tc = 105°C
10
A
I_TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I^²t
I^²t Value for fusing
dI/dt
Critical rate of rise of on-state current
I_G = 2 x I _GT , tr <_ 100 ns
V_DSM/V _RSM
Non repetitive surge peak off-state
voltage
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
100
105
55
50
V_DRM/V_RRM
+ 100
A
A^²s
A/µs
V
I_GM
P_G(AV)
T_stg
T_j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA
I_GT
V_GT
V_GD
I_H
I_L
dV/dt
(dI/dt)c
V_D = 12 V
R_L = 33 Ω
I - II - III
I - II - III
V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C I - II - III
I_T = 500 mA
I - III
I_G = 1.2 I_GT
II
V_D = _{67 %} V_{DRM gate open Tj = 125°C}
Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW
35
1.3
0.2
35
50
60
500
5.5
BW
50
50
70
80
1000
9.0
Unit
mA
V
V
mA
mA
V/µs
A/ms
P1
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: [phone] Fax: [phone] E-mail: [e-mail]