BAT10 Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Discrete Triacs

BTA10
Discrete Triacs(Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
F ig.2: R MS on-state current vers us cas e
temperature (full cycle).
P (W)
13
12
11
10
9
8
7
6
5
4
3
2
1
IT(R MS ) (A)
0
0 1 2 3 4 5 6 7 8 9 10
IT(R MS ) (A)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
25
Tc(°C )
50
75
BTB
B TA
100
125
F ig. 3 : R elative variation of thermal impeda nce
versus pulse duration.
F ig. 4 : On-s tate cha racteris tics (maximum
values ).
K =[Zth/R th]
1E +0
Zth(j-c )
ITM (A)
100
Tj max.
V to = 0.8V5
R d = 40 Wm
T j max
1E -1
Z th ( j-a )
10
T j=25°C
1E -2
1E -3
1E -2
tp (s )
1E -1 1E +0
1E +1
1E +2 5E +2
VTM (V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
F ig. 5 : S urge peak on-state current vers us
number of cycles .
F ig.6 : Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10ms, and corres ponding value of I²t.
ITS M (A)
110
100
90
80
70
60
50
40
R epetitive
T c=95°C
30
20
10
0
1
Non repetitive
T j initial=25°C
Number
10
of yccles
100
t=20ms
One cycle
1000
IT S M (A ),I²t (A ²s )
1000
100
dI/dt limitation:
50A /µs
T j initial=25°C
ITS M
I²t
10
0.01
tp (ms )
0.10
1.00
10.00
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