SI88X2X Datasheet, PDF (8/45 Pages) Silicon Laboratories – Isolation of up to 5000 Vrms

Si88x2x
Table 2. Electrical Characteristics¹ (Continued)
V_IN = 24 V; V_DDA = V_DDP = 3.0 to 5.5 V (see Figure 2) for all Si8822x/32x; V_DDA = 4.3 V (see Figure 3) for all Si8842x/62x;
T_A = –40 to 125 °C unless otherwise noted.
Parameter
Symbol
Test Condition
Min Typ Max Unit
1 Mbps, VDDB = 3.3 V ± 10% (All Inputs = 500 kHz Square Wave, C_LOAD = 15 pF)
Si88x20
V_DDA
V_DDB
mA
—
7.1
—
5.2
Si88x21
V_DDA
V_DDB
mA
—
6.9
—
3.9
Si88x22
V_DDA
V_DDB
mA
—
5.8
—
4.4
100 Mbps, VDDB = 3.3 V ± 10% (All Inputs = 50 MHz Square Wave, C_LOAD = 15 pF)
Si88x20
V_DDA
V_DDB
Si88x21
V_DDA
V_DDB
mA
—
7.3
— 12.1
mA
—
9.3
—
6.4
Si88x22
V_DDA
V_DDB
mA
— 16.2
—
4.0
Notes:
1. Over recommended operating conditions as noted in Table 1.
2. VOUT = VSNS x (1 + R1/R2) + R1 x I_offset
3. VDDP current needed for dc-dc circuits.
4. VDDA current needed for dc-dc circuits.
5. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
6. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
7. Start-up time is the time period from when the UVLO threshold is exceeded to valid data at the output.
8
Rev. 0.5