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SI5330A-A00200-GM Datasheet, PDF (7/20 Pages) Silicon Laboratories – 1.8/2.5/3.3 V LOW-JITTER, LOW-SKEW CLOCK BUFFER/LEVEL TRANSLATOR | |||
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Si5330
Table 4. Input and Output Clock Characteristics (Continued)
(VDD = 1.8 V â5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = â40 to 85 °C)
Parameter
HSTL Output Voltage
Symbol
VOH
VOL
Duty Cycle*
DC
*Note: Input clock has a 50% duty cycle.
Test Condition
VDDO = 1.4 to 1.6 V
Min
0.5xVDDO +0.3
â
45
Typ
Max
Units
â
â
V
â
0.5xVDDO
â0.3
V
â
55
%
Table 5. OEB Input Specifications
Parameter
Input Voltage Low
Input Voltage High
Input Resistance
Symbol
Test Condition
Min
Typ
Max
Unit
VIL
â
â
0.3 x VDD
V
VIH
0.7 x VDD
â
â
V
RIN
20
â
â
kï
Table 6. Output Control Pins (LOS)
(VDD = 1.8 V â5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = â40 to 85 °C)
Parameter
Symbol
Condition
Min
Typ
Max Unit
Output Voltage Low
Rise/Fall Time 20â80%
VOL
ISINK = 3 mA
0
tR/tF CL < 10 pf, pull up ï£ï 1 kï
â
â
0.4
V
â
10
ns
Table 7. Jitter Specifications
(VDD = 1.8 V â5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = â40 to 85°C)
Parameter
Symbol
Test Condition
Min
Additive Phase Jitter
(12 kHzâ20 MHz)
0.7 V pk-pk differential input
tRPHASE clock at 622.08 MHz with
â
70 ps rise/fall time
Additive Phase Jitter
(50 kHzâ80 MHz)
0.7 V pk-pk differential input
tRPHASEWB clock at 622.08 MHz with
â
70 ps rise/fall time
Typ
0.150
0.225
Max
Unit
â ps RMS
â ps RMS
Table 8. Thermal Characteristics
Parameter
Thermal Resistance
Junction to Ambient
Thermal Resistance
Junction to Case
Symbol
ï±JA
ï±JC
Test Condition
Still Air
Still Air
Value
37
25
Unit
°C/W
°C/W
Rev. 1.0
7
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