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SI52142 Datasheet, PDF (5/20 Pages) Silicon Laboratories – PCI-EXPRESS GEN 1, GEN 2 & GEN 3 CLOCK TWO OUTPUT GENERATOR WITH 25 MHZ REFERENCE CLOCK
Si52142
Table 2. AC Electrical Specifications
Parameter
Symbol
Condition
Min
Crystal
Long-term Accuracy
LACC
Measured at VDD/2 differential
—
Clock Input
CLKIN Duty Cycle
CLKIN Rise and Fall Times
CLKIN Cycle to Cycle Jitter
CLKIN Long Term Jitter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
TDC
TR/TF
TCCJ
TLTJ
VIH
VIL
IIH
IIL
Measured at VDD/2
47
Measured between 0.2 VDD and 0.5
0.8 VDD
Measured at VDD/2
—
Measured at VDD/2
—
XIN/CLKIN pin
2
XIN/CLKIN pin
—
XIN/CLKIN pin, VIN = VDD
—
XIN/CLKIN pin, 0 < VIN <0.8
–35
DIFF at 0.7 V
DIFF Duty Cycle
TDC
Measured at 0 V differential
45
Any DIFF Clock Skew from the TSKEW(win Measured at 0 V differential
—
earliest bank to the latest bank
dow)
DIFF Cycle to Cycle Jitter
TCCJ
Measured at 0 V differential
—
Output PCIe Gen1 REFCLK RMSGEN1 Includes PLL BW 1.5–22 MHz,
0
Phase Jitter
ζ = 0.54, Td=10 ns,
Ftrk=1.5 MHz with BER = 1E-12
Output PCIe Gen2 REFCLK RMSGEN2 Includes PLL BW 8–16 MHz,
0
Phase Jitter
Jitter Peaking = 3 dB, ζ = 0.54,
Td=12 ns, Low Band,
F < 1.5 MHz
Output PCIe Gen2 REFCLK RMSGEN2 Includes PLL BW 8–16 MHz, Jitter 0
Phase Jitter
Peaking = 3 dB, ζ = 0.54,
Td=12 ns, High Band,
1.5 MHz < F < Nyquist
Output Phase Jitter Impact— RMSGEN3 Includes PLL BW 2 – 4 MHz,
0
PCIe Gen3
CDR = 10 MHz)
DIFF Long Term Accuracy
LACC
Measured at 0 V differential
—
DIFF Rising/Falling Slew Rate TR / TF
Measured differentially from
1
±150 mV
Voltage High
VHIGH
—
Voltage Low
VLOW
–0.3
Crossing Point Voltage at 0.7 V VOX
300
Swing
Typ Max Unit
—
250 ppm
—
53
%
—
4.0 V/ns
—
250
ps
—
350
ps
— VDD+0.3 V
—
0.8
V
—
35
µA
—
—
µA
—
55
%
—
50
ps
35
50
ps
40
108
ps
2
3.0
ps
2
3.1
ps
0.5
1.0
ps
—
100 ppm
—
8
V/ns
—
1.15
V
—
—
V
—
550 mV
Preliminary 0.1
5