CP2105 Datasheet, PDF (5/24 Pages) Silicon Laboratories – Data format: 8 data bits, 1 stop bit Parity: Even, Pdd, No parity Baud rates: 2400 bps to 921600 bps

CP2105
2. Electrical Characteristics
Table 1. Absolute Maximum Ratings
Parameter
Conditions
Min
Typ
Max Units
Ambient Temperature Under Bias
–55
—
125
°C
Storage Temperature
–65
—
150
°C
Voltage on RST, GPIO or UART Pins with respect to V_IO > 2.2 V
–0.3
—
5.8
V
GND
V_IO < 2.2 V
–0.3
—
V_IO +
3.6
Voltage on V_DD or V_IO with respect to GND
Maximum Total Current through V_DD, V_IO, and GND
Maximum Output Current Sunk by RST or any I/O pin
–0.3
—
4.2
V
—
—
500
mA
—
—
100
mA
Note: Stresses above those listed may cause permanent damage to the device. This is a stress rating only, and functional
operation of the devices at or exceeding the conditions in the operation listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 2. Global DC Electrical Characteristics
V_DD = 3.0 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
Max Units
Digital Supply Voltage (V_DD)
Digital Port I/O Supply Voltage (V_IO)
Supply Current¹
Supply Current¹
Supply Current - USB Pull-up²
3.0
—
3.6
V
1.8
—
V_DD
V
Normal Operation;
—
V_REG Enabled
17
18.5
mA
Suspended;
V_REG Enabled
—
100
220
µA
—
200
228
µA
Specified Operating Temperature Range
–40
—
+85
°C
Notes:
1. If the device is connected to the USB bus, the USB Pull-up Current should be added to the supply current for total
supply current.
2. The USB Pull-up supply current values are calculated values based on USB specifications.
Rev. 1.0
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