SI4706-D50 Datasheet, PDF (4/36 Pages) Silicon Laboratories – HIGH-PERFORMANCE FM AND RDS/RBDS RECEIVER

Si4706-D50
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Symbol Test Condition
Min Typ Max Unit
Analog Supply Voltage
Digital and Interface Supply Voltage
Analog Power Supply Powerup Rise Time
V_A
V_D
V_ARISE
2.7
—
5.5
V
1.62 —
3.6
V
10
—
—
µs
Digital Power Supply Powerup Rise Time V_DRISE
10
—
—
µs
Ambient Temperature
T_A
–20
25
85
C
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V_A = 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings^1,2
Parameter
Symbol
Value
Unit
Analog Supply Voltage
V_A
–0.5 to 5.8
V
Digital and Interface Supply Voltage
Input Current³
Input Voltage³
V_D
–0.5 to 3.9
V
I_IN
10
mA
V_IN
–0.3 to (V_IO + 0.3)
V
Operating Temperature
T_OP
–40 to 95
C
Storage Temperature
RF Input Level⁴
T_STG
–55 to 150
C
0.4
V_pK
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
2. The Si4706 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of these devices should only be done at ESD-protected workstations.
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, and GPO3.
4. At RF input pins FMI and LPI.
4
Rev. 1.0