EFR32MG1 Datasheet, PDF (39/94 Pages) Silicon Laboratories – Home and Building Automation and Security

4.1.12 Primary Flash Memory Characteristics
EFR32MG1 Mighty Gecko SoC with Integrated Serial Flash Data Sheet
Electrical Specifications
Table 4.23. Primary Flash Memory Characteristics¹
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Flash erase cycles before
failure
EC_FLASH
10000
—
—
cycles
Flash data retention
RET_FLASH
T_AMB ≤ 85 °C
10
—
—
years
T_AMB ≤ 125 °C
10
—
—
years
Word (32-bit) programming t_{W_PROG}
time
20
26
40
μs
Page erase time
t_PERASE
20
27
40
ms
Mass erase time
t_MERASE
20
27
40
ms
Device erase time²
t_DERASE
T_AMB ≤ 85 °C
—
60
74
ms
T_AMB ≤ 125 °C
—
60
78
ms
Page erase current³
I_ERASE
—
—
3
mA
Mass or Device erase cur-
rent³
—
—
5
mA
Write current³
I_WRITE
—
—
3
mA
Note:
1. Flash data retention information is published in the Quarterly Quality and Reliability Report.
2. Device erase is issued over the AAP interface and erases all flash, SRAM, the Lock Bit (LB) page, and the User data page Lock
Word (ULW)
3. Measured at 25°C
4.1.13 Serial Flash Memory Characteristics
Table 4.24. Serial Flash Memory Characteristics
Parameter
Symbol
Serial flash erase cycles be- EC_SFLASH
fore failure
Serial flash data retention
RET_SFLASH
Page Program Time
t_PPROG
Erase Time
t_ERASE
Test Condition
1 to 256 Bytes
4 kByte Sector
32 kByte Block
64 kByte Block
Full Erase
Min
Typ
100000
—
20
—
—
0.5
—
70
—
130
—
200
—
1.5
Max
—
—
0.8
300
500
1000
3
Unit
cycles
years
ms
ms
ms
ms
s
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