SI82390AD-IS Datasheet, PDF (23/38 Pages) Silicon Laboratories – 4.0 A ISODrivers with 2.5 V VDDI and Safety Features

Si8239x Data Sheet
Electrical Characteristics
Table 4.7. Thermal Characteristics
Parameter
IC Junction-to-Air Ther-
mal Resistance
Symbol
θ_JA
WB SOIC-16
100
NB SOIC-16
105
Table 4.8. Absolute Maximum Ratings¹
Unit
°C/W
Parameter
Symbol
Min
Max
Unit
Ambient Temperature
T_A
under Bias
–40
+125
°C
Storage Temperature
T_STG
–65
+150
°C
Junction Temperature
T_J
—
+150
°C
Input-side Supply Volt-
VDDI
–0.6
6.0
V
age
Driver-side Supply Volt-
VDDA, VDDB
–0.6
30
V
age
Voltage on any Pin with
V_IO
respect to Ground
–0.5
VDD + 0.5
V
Peak Output Current
I_OPK
—
4.0
A
(t_PW = 10 µs, duty cycle
= 0.2%)
Lead Solder Tempera-
ture (10 s)
—
260
°C
ESD per AEC-Q100
HBM
—
4
kV
CDM
—
2
kV
Maximum Isolation (Input
to Output) (1 s) WB SO-
IC-16
—
6500
V_RMS
Maximum Isolation (Out-
put to Output) (1 s) WB
SOIC-16
—
2500
V_RMS
Maximum Isolation (Input
to Output) (1 s) NB SO-
IC-16
—
4500
V_RMS
Maximum Isolation (Out-
put to Output) (1 s) NB
SOIC-16
—
2500
V_RMS
Note:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to
the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
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