SI82390AD-IS Datasheet, PDF (21/38 Pages) Silicon Laboratories – 4.0 A ISODrivers with 2.5 V VDDI and Safety Features

Si8239x Data Sheet
Electrical Characteristics
Table 4.3. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
WBSOIC-16
NBSOIC-16
Nominal Air Gap
(Clearance)¹
L(1O1)
8.0
4.01
mm
Nominal External
Tracking (Creepage)
L(1O2)
8.0
4.01
mm
Minimum Internal
Gap (Internal Clear-
ance)
0.014
0.014
mm
Tracking Resistance
PTI
IEC60112
600
600
V
(Proof Tracking In-
dex)
Erosion Depth
ED
0.019
0.019
mm
Resistance (Input-
R_IO
Output)²
10¹²
10¹²
Ω
Capacitance (Input-
C_IO
f = 1 MHz
1.4
1.4
pF
Output)²
Input Capacitance³
C_I
4.0
4.0
pF
Note:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in 7. Package Outline: 16-Pin Wide
Body SOIC and 9. Package Outline: 16-Pin Narrow Body SOIC. VDE certifies the clearance and creepage limits as 4.7 mm mini-
mum for the NB SOIC-16 and 8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage
minimum for component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SO-
IC16 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si8239x is converted into a 2-terminal device. Pins 1–8 are shorted together to
form the first terminal,and pins 9–16 are shorted together to form the second terminal. The parameters are then measured be-
tween these two terminals.
3. Measured from input pin to ground.
Parameter
Basic Isolation Group
Installation Classification
Table 4.4. IEC 60664-1 (VDE 0884) Ratings
Test Condition
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
WB SOIC-16
NB SOIC-16
I
I
I-IV
I-IV
I-IV
I-III
I-III
I-II
I-III
I-II
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