SI82390AD-IS Datasheet, PDF (17/38 Pages) Silicon Laboratories – 4.0 A ISODrivers with 2.5 V VDDI and Safety Features

Parameter
Symbol
Test Condition
Min
VDDA, VDDB Undervoltage Threshold
VDDA_UV+,
VDDB_UV+
VDDA, VDDB rising
6V
5.0
8V
7.2
12 V
9.2
VDDA, VDDB Undervoltage Threshold
VDDA_UV–,
VDDB_UV–
VDDA, VDDB falling
6V
4.7
8V
6.6
12 V
8.7
VDDA, VDDB Lockout Hysteresis
VDDA_HYS,
VDDB_HYS
UVLO = 6 V
200
UVLO = 8 V
450
UVLO = 12 V
600
UVLO Fault Shutdown Time Enhanced
Mode
Si82390/1 only
VDDA_UV– to VOB low
—
VDDB_UV– to VOA low
UVLO Fault Shutdown Time
VDDA_UV– to VOA low
—
VDDB_UV– to VOB low
UVLO fault to RDY
t_FLT
—
AC Specifications
Minimum Pulse Width
—
Propagation Delay
t_pHL, t_pLH
Si82390/1/5/6/7
20
VDDA/B = 12 V
t_pHL
Si82394/8
20
C_L = 0 pF
t_pLH
Si82394/8 (measured with 6
35
kΩ RDT resistor; includes
minimum dead time.)
Pulse Width Distortion |t_PLH – t_PHL|
PWD
VDDA/B = 12 V
—
C_L = 0 pF
Programmed Dead Time for product
DT
options with 10–200 ns dead time set-
ting range
RDT = 6 kΩ
9
RDT = 15 kΩ
23
RDT = 100 kΩ
150
Output Rise and Fall Time
t_R,t_F
C_L = 200 pF
—
Shutdown Time from Enable False
t_SD
—
Restart Time from Enable True
t_RESTART
—
Device Start-up Time Input
Time from VDDI_ = VDDI_UV —
+ to VOA, VOB = VIA, VIB
Si82390/4/5/7
t_{START_SAFE}
Si82391/6/8
t_START
Si8239x Data Sheet
Electrical Characteristics
Typ
Max
Unit
V
6.0
7.0
8.6
10.0
11.1
12.8
V
5.8
6.7
8.0
9.3
10.1
11.6
280
—
mV
600
—
1000
—
120
—
ns
500
—
ns
92
—
ns
30
—
ns
30
40
ns
30
40
ns
45
55
ns
2.7
5.60
ns
14
19
ns
33
43
200
250
—
12
ns
—
60
ns
—
60
ns
—
1
ms
40
µs
silabs.com | Smart. Connected. Energy-friendly.
Rev. 0.9 | 16