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SI4463 Datasheet, PDF (13/53 Pages) Silicon Laboratories – HIGH-PERFORMANCE | |||
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Si4463/61/60-C
Table 7. Thermal Characteristics
Parameter
Operating Ambient Temperature Range
Thermal Impedance Junction to Ambient*
Junction Temperature Maximum Value*
Storage Temperature Range
*Note: ï±JA and Tj are based on RF evaluation board measurements.
Symbol
TA
ï±JA
Tj
TSTG
Value
â40 to +85
25
+105
â55 to +150
Unit
°C
°C/w
°C
°C
Table 8. Absolute Maximum Ratings
Parameter
Value
Unit
VDD to GND
Instantaneous VRF-peak to GND on TX Output Pin
Sustained VRF-peak to GND on TX Output Pin
Voltage on Analog Inputs
RX Input Power
â0.3, +3.8
â0.3, +8.0
â0.3, +6.5
â0.7, VDD + 0.3
+10
V
V
V
V
dBm
Note: Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX
matching network design will influence TX VRF-peak on TX output pin. Caution: ESD sensitive device.
Rev 1.0
13
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