S-1000 Datasheet, PDF (9/38 Pages) Seiko Instruments Inc – ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Rev.2.3_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
„ Electrical Characteristics
1. Nch open-drain output products
Table 9
(Ta = 25 °C unless otherwise specified)
Measure-
Item
Symbol
Condition
Min. Typ. Max. Unit ment
circuit
Detection voltage^*1
Hysteresis width
−V_DET
V_HYS
−
−V_DET(S) −V_DET(S) −V_DET(S)
×0.99
×1.01
V
1
−
−V_DET
×0.03
−V_DET −V_DET
×0.05 ×0.07
V
1
Current consumption
Operating voltage
Output current
Leakage current
Response time
I_SS
V_DD = −V_DET(S) + 1.5 V S-1000N15 to 39
−
V_DD = 5.5 V
S-1000N40 to 46 −
350 900 nA
2
350 900 nA
2
V_DD
−
0.95
−
5.5 V
1
Output transistor,
I_OUT
Nch, V_DS = 0.5 V, V_DD = 1.2 V
1.36 2.55
− mA
3
I_LEAK
Output transistor,
Nch, V_DS = 5.5 V, V_DD = 5.5 V
−
−
100 nA
3
t_PLH
−
−
−
60 µs
1
Detection voltage
∆−V_DET
temperature coefficient^*2 ∆Ta•−VDET
Ta = −40 to +85 °C
ppm /
−
±100 ±350 _°C
1
*1. −V_DET: Actual detection voltage value, −V_DET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 1.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[ ] [ ] [ ] ^{∆ − VDET}
∆Ta
mV / °C ^*1 = ( ) −VDET(S) Typ.
V ^*2 × ^{∆ − VDET}
∆Ta • −VDET
ppm / °C ^*3 ÷ 1000
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
9