S-1000 Datasheet, PDF (10/38 Pages) Seiko Instruments Inc – ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Rev.2.3_00
2. CMOS output products
Table 10
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Measure-
Min. Typ. Max. Unit ment
circuit
Detection voltage^*1
Hysteresis width
−V_DET
V_HYS
−
−V_DET(S) −V_DET(S) −V_DET(S)
×0.99
×1.01
V
1
−
−V_DET −V_DET −V_DET
×0.03 ×0.05 ×0.07
V
1
Current consumption
I_SS
V_DD = −V_DET(S)+ 1.5 V S-1000C15 to 39 −
V_DD = 5.5 V
S-1000C40 to 46 −
350 900 nA
2
350 900 nA
2
Operating voltage
V_DD
Output current
I_OUT
Response time
t_PLH
Detection voltage
∆−V_DET
temperature coefficient^*2 ∆Ta•−VDET
−
Output transistor,
Nch, V_DS = 0.5 V, V_DD = 1.2 V
Output transistor,
Pch, V_DS = 0.5 V, V_DD = 5.5 V
−
Ta = −40 to +85 °C
0.95
−
5.5 V
1
1.36 2.55
− mA
3
1.71 2.76
− mA
4
−
−
60 µs
1
−
±100
±350
ppm/
°C
1
*1. −V_DET: Actual detection voltage value, −V_DET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 2.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[ ] [ ] [ ] ^{∆ − VDET}
∆Ta
mV / °C ^*1 = ( ) −VDET(S) Typ.
V ^*2 × ^{∆ − VDET}
∆Ta • −VDET
ppm / °C ^*3 ÷ 1000
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
10
Seiko Instruments Inc.