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S-80819CNMC-B8ET2G Datasheet, PDF (18/56 Pages) Seiko Instruments Inc – SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage*1
−VDET
⎯
−VDET(S) −VDET(S) −VDET(S)
×0.98
×1.02
V
1
Hysteresis width
VHYS
⎯
−VDET
×0.03
−VDET
×0.05
−VDET
×0.08
V
1
Current consumption
Operating voltage
Output current
ISS
VDD = 3.5 V
S-80815 to 26 ⎯
0.8
2.4 μA 2
VDD = 4.5 V
S-80827 to 39 ⎯
0.8
2.4 μA 2
VDD = 6.0 V
S-80840 to 56 ⎯
0.9
2.7 μA 2
VDD = 7.5 V
S-80857 to 60 ⎯
0.9
2.7 μA 2
VDD
⎯
0.95
⎯
10.0 V 1
IOUT
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
0.59
1.36
⎯ mA 3
VDD = 2.4 V
S-80827 to 60
2.88
4.98
⎯ mA 3
Leakage current
ILEAK
Output transistor,
Nch, VDS = 10.0 V, VDD = 10.0 V
⎯
⎯
100 nA 3
Response time
tPLH
⎯
⎯
⎯
60 μs 1
Detection voltage
temperature
coefficient*2
Δ − VDET
ΔTa • −VDET
Ta = −40 to +85 °C
⎯
±100
±350
ppm/
°C
1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[ ] [ ] [ ] ( ) Δ − VDET mV/°C *1 = −VDET(S) Typ. V *2 × Δ − VDET ppm/°C *3 ÷ 1000
ΔTa
ΔTa • −VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
18
Seiko Instruments Inc.