S-801 Datasheet, PDF (12/33 Pages) Seiko Instruments Inc – ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL DELAY TIME SETTING)

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL DELAY TIME SETTING)
S-801 Series
Rev.3.3_00
„ Electrical Characteristics
Table 6
(Ta=25 °C Unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage^*1
−V_DET
—
−V_DET(S) −V_DET(S) −V_DET(S)
×0.98
×1.02
V
1
Hysteresis width
Current
consumption
Operating voltage
Output current
V_HYS
I_SS
V_DD
I_OUT
—
V_DD=3.5 V
V_DD=4.5 V
V_DD=6.5 V
—
Output transistor,
Nch, V_OUT=0.5 V
30
60 100 mV
S-80122 to 26 — 1.3 3.3 μA
S-80127 to 39 — 1.5 3.5
S-80140 to 60 — 1.8 4.0
0.95 — 10.0 V
V_DD=1.2 V
S-80122 to 60
0.75
1.5
— mA 2
V_DD=2.4 V
S-80127 to 60
3.0
6.0
—
Only for CMOS output
products,
V_DD=4.8 V
S-80122 to 39
1.0
2.0
—
Output transistor,
Pch, V_DD–V_OUT=0.5 V
V_DD=6.0 V
S-80140 to 54
1.25
2.5
—
V_DD=8.4 V
S-80155 to 60
1.5
3.0
—
Only for Nch open-drain output products,
Leakage current
Detection voltage
temperature
coefficient ^*2
I_LEAK Output transistor,
Nch, V_DD=10.0 V, V_OUT=10.0 V
Δ − VDET
ΔTa • −VDET
Ta=−40 °C to +85 °C
—
— 0.1 μA
—
±120
±360
ppm/
°C
1
Delay time 1
t_D1
V_DD=−V_DET+1 V, DS pin Low S-801xxAx
32.5 50 72.5 ms
S-801xxBx
65 100 145
S-801xxCx 130 200 290
Delay time 2
Input voltage
t_D2
V_DD=−V_DET+1 V, DS pin High
V_SH
DS pin, V_DD=6.0 V
V_SL
DS pin, V_DD=6.0 V
110 220 330 μs 3
1.0 —
—
V4
—
— 0.3
*1. −V_DET: Actual detection voltage value, −V_DET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. Temperature change ratio for the detection voltage [mV/°C] is calculated using the following equation.
[ ] [ ] [ ] ( ) ^{Δ − VDET} mV/°C ^*1 = −VDET(S) Typ. V ^*2 × ^{Δ − VDET} ppm/°C ^*3 ÷ 1000
ΔTa
ΔTa • −VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage value
*3. Detection voltage temperature coefficient
12
Seiko Instruments Inc.