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HYM64V1605GU-50 Datasheet, PDF (9/17 Pages) Siemens Semiconductor Group – 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module | |||
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HYM 64(72)V1605/45GU-50/-60
16M x 64/72 DRAM Module
DC Characteristics for HYM64/72V1605 (4k-refresh)
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol
x 64
min. max.
Average VCC supply current:
ICC1
-50 version
-60 version
â 2240
â 1840
x 72
min. max.
â 2520
â 2070
Unit Note
s
mA 2) 3)
mA 4)
(RAS,CAS,address cycling, tRC=tRC min.)
Standby VCC supply current
ICC2
(RAS = CAS = VIH, one address change)
Average VCC supply current during RAS ICC3
only refresh cycles:
-50 version
-60 version
â
32
â
36 mA â
2) 4)
â 2240 â 2520 mA
â 1840 â 2070 mA
(RAS cycling, CAS = VIH , tRC = tRC min.)
Average VCC supply current during
ICC4
hyper page mode (EDO):
-50 version
-60 version
â
1680
â
1890 mA 2) 3)
â 1360 â 1530 mA 4)
(RAS = VIL, CAS, address cycling
tPC = tPC min.)
Standby VCC supply current
ICC5
(RAS = CAS = VCC â 0.2 V, one address
change)
Average VCC supply current during
ICC6
CAS-before-RAS refresh mode:
-50 version
-60 version
â
16
â
18 mA â
â
2240
â
2520 mA 2) 4)
â 1840 â 2070 mA
(RAS, CAS cycling, tRC = tRC min.)
Semiconductor Group
9
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