HYM64V1605GU-50 Datasheet, PDF (10/17 Pages) Siemens Semiconductor Group – 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module

HYM 64(72)V1605/45GU-50/-60
16M x 64/72 DRAM Module
DC Characteristics for HYM64/72V1645 (8k-refresh)
T_A = 0 to 70 °C; V_CC = 3.3 V ± 0.3 V
Parameter
Symbol
x 64
min. max.
Average V_CC supply current:
I_CC1
-50 version
-60 version
– 1600
– 1360
x 72
min. max.
– 1800
– 1530
Unit Note
s
mA ^{2) 3)}
mA ⁴⁾
(RAS,CAS,address cycling, t_RC=t_RC min.)
Standby V_CC supply current
I_CC2
(RAS = CAS = V_IH, one address change)
Average V_CC supply current during RAS I_CC3
only refresh cycles:
-50 version
-60 version
–
32
–
36 mA –
2) 4)
– 1600 – 1800 mA
– 1360 – 1530 mA
(RAS cycling, CAS = V_IH , t_RC = t_RC min.)
Average V_CC supply current during
I_CC4
hyper page mode (EDO):
-50 version
-60 version
–
1680
–
1890 mA ^{2) 3)}
– 1360 – 1530 mA ⁴⁾
(RAS = V_IL, CAS, address cycling
t_PC = t_PC min.)
Standby V_CC supply current
I_CC5
(RAS = CAS = V_CC – 0.2 V, one address
change)
Average V_CC supply current during
I_CC6
CAS-before-RAS refresh mode:
-50 version
-60 version
–
16
–
18 mA –
–
2240
–
2520 mA ^{2) 4)}
– 1840 – 2070 mA
(RAS, CAS cycling, t_RC = t_RC min.)
Semiconductor Group
10